| PART |
Description |
Maker |
| KM416V1204BJ KM416V1004BT-L7 KM416V1204BT-L7 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns
1M x 16BIT CMOS DYNAMIT RAM WITH EXTENDED DATA OUT
|
Samsung Electronic
Samsung semiconductor
|
| SR130 SR140 SR160 SR120 SR150 |
High surge current capability High current capability Low forward voltage drop
|
First Components International
First Components Intern...
|
| SI9712DY 70024 SI9712 |
PC Card (PCMCIA) Interface Switch with 12V Suspend Capability(PC卡（PCMCIA）接口智能开
PC Card (PCMCIA) Interface Switch―12-V Suspend Capability
From old datasheet system
PC Card (PCMCIA) Interface Switch - 12-V Suspend Capability
|
Vishay Intertechnology,Inc.
|
| KM48V8104C KM48V8004C KM48V8104CK-45 KM48V8104CKL- |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns
8M x 8bit CMOS dynamic RAM with extended data out, 45ns
8M x 8bit CMOS dynamic RAM with extended data out, 60ns
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| KM48V8104B KM48V8004B KM48V8004BKL-5 KM48V8004BKL- |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns
8M x 8bit CMOS dynamic RAM with extended data out, 60ns
8M x 8bit CMOS dynamic RAM with extended data out, 50ns
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HA1-2541-5 FN2898 HA-2541 |
Op Amp, 40MHz, Fast Settling, Unity Gain Stable
40MHz, Fast Settling, Unity Gain Stable,
Operational Amplifier(40MHz、快速稳定运算放大器)
40MHz/ Fast Settling/ Unity Gain Stable/ Operational Amplifier
40MHz, Fast Settling, Unity Gain Stable, Operational Amplifier
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| K4E16708112D K4E160811D K4E160811D-B K4E160811D-F |
2M x 8Bit CMOS Dynamic RAM with Extended Data Out Data Sheet
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle.
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle.
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle.
|
Samsung Electronic
|
| KM48C8104B KM48C8004B KM48C8004BK-6 KM48C8004BS-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 5V, 50ns
8M x 8bit CMOS dynamic RAM with extended data out, 5V, 60ns
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| USG1115-200M-0.10.10PPM USG1115-150M-0.10.10PPM US |
Ultra-Stable Precision High Voltage Resistors
Type USG Ultra-Stable Precision High Voltage Resistors
|
RHOPOINT COMPONENTS
|
| AD841SH/883B AD841SQ/883B AD841SE/883B AD841JH AD8 |
Wideband, Unity-Gain Stable, Fast Settling Op Amp
Wideband, Unity-Gain Stable, Fast Settling Op Amp OP-AMP, 5500 uV OFFSET-MAX, 40 MHz BAND WIDTH, MBCY12
Wideband, Unity-Gain Stable, Fast Settling Op Amp OP-AMP, 5500 uV OFFSET-MAX, 40 MHz BAND WIDTH, CQCC20
Wideband, Unity-Gain Stable, Fast Settling Op Amp OP-AMP, 5500 uV OFFSET-MAX, 40 MHz BAND WIDTH, CDIP14
Wideband/ Unity-Gain Stable/ Fast Settling Op Amp
|
ANALOG DEVICES INC
Analog Devices, Inc.
|
| FL-3348-XXS FL-3345-XF FL-3340 FL-3345-VF FL-3340- |
400 W Transient Voltage Suppressors 28 V SMA Bidirectional
1500 W Transient Voltage Suppressor 9.0 V SMC Unidirectional
/-1C TDM Extended Temp Range I.C. 4Ch 1310 nm激光二极管模块致冷量子阱，计划生育与辫子劳工处
1310 nm LASER DIODE MODULES UNCOOLED MQW-FP LD WITH PIGTAIL 1310 nm激光二极管模块致冷量子阱，计划生育与辫子劳工处
/-1C TDM Extended Temp Range I.C. 4Dh 1310 nm激光二极管模块致冷量子阱，计划生育与辫子劳工处
|
Optoway Technology Inc.
Optoway Technology, Inc.
|
